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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1601 DESCRIPTION *With ITO-220 package *Switching power transistor *Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -40 -7 -15 -30 -2 -3 45 150 -55~150 UNIT V V V A A A A W IBM PT Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.77 UNIT /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1601 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated volatge IC=-7.5A ; VCE=-2V IC=-1.5A ; VCE=-10V 70 50 MHz -0.1 mA -0.1 mA CONDITIONS IC=-0.1A ;IB=0 IC=-7.5A; IB=-0.4A IC=-7.5A; IB=-0.4A MIN -40 -0.3 -1.2 TYP. MAX UNIT V V V Switching times ton ts tf Turn-on time Storage time Fall time IC=-7.5A;IB1=-IB2=-0.75A , RL=4;VBB2=-4V 0.3 1.5 0.5 s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1601 Fig.2 Outline dimensions (unindicated tolerance:0.20 mm) 3 |
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